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LBAS20LT1G |
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| Part Number | LBAS20LT1G |
| Manufacturer | Leshan Radio Company |
| Description | LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode FEATURE • We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requirin... |
| Features |
eristic
Symbol
OFF CHARACTERISTICS
Reverse Voltage Leakage Current (VR = 200 Vdc)
IR
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage (IBR = 100 µAdc)
V(BR)
Forward Voltage
VF
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
CD
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω)
trr
Min
– – 200 – – – – Max 1.0 100 – 1000 1250 5.0 50 Unit µAdc Vdc mV pF ns Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LBAS20LT1G, S-LBAS20LT1G 820Ω +10 V 2.0 k 100 µH 0.1 µF IF 0.1 µF tr tp 10% t IF trr t 50Ω Output Pulse Generator D.U.T. 50Ω Input Sampling Os... |
| Document |
 LBAS20LT1G Data Sheet
PDF 291.86KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LBAS20LT3G |
Leshan Radio Company |
High Voltage Switching Diode |
|
| 2 | LBAS20HT1 |
Leshan Radio Company |
Switching Diode |
|
| 3 | LBAS20HT1G |
LRC |
High Voltage Switching Diode |
|
| 4 | LBAS21CLT1G |
Leshan Radio Company |
High Voltage Switching Diode |
|
| 5 | LBAS21CLT3G |
Leshan Radio Company |
High Voltage Switching Diode |
|
| 6 | LBAS21HT1 |
Leshan Radio Company |
Switching Diode |
|
Desde 2024. D4U Semiconductor.
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