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IXBL64N250 |
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| Part Number | IXBL64N250 |
| Manufacturer | IXYS Corporation |
| Description | Advance Technical Information High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL64N250 VCES IC110 VCE(sat) = = ≤ 2500V 46A 3.0V (Electrically Isolated Tab) ISOPLUS i5-Pak... |
| Features |
z Silicon Chip on Direct-Copper Bond (DCB) Substrate
z Isolated Mounting Surface z 2500V∼ Electrical Isolation z High Blocking Voltage z Low Switching Losses z High Current Handling Capability z Anti-Parallel Diode
Advantages
z High Power Density z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 1mA, VGE = 0V
VGE(th)
IC = 4mA, VCE = VGE
ICES VCE = 0.8 • VCES, VGE = 0V Note 2, TJ = 125°C IGES VCE = 0V, VGE = ± 25V VCE(sat) IC = 64A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 2500 V 3.0 5.0 V 50 μA 6 mA ... |
| Document |
 IXBL64N250 Data Sheet
PDF 180.16KB |
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Desde 2024. D4U Semiconductor.
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