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RCR1526SQ |
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| Part Number | RCR1526SQ |
| Manufacturer | RCR |
| Description | This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for... |
| Features |
VDS(V) = -30V, ID = -5.2A, RDS(ON) = 51mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High density cell design for low RDS(ON).
very small outline surface mount package.
z Pin Configuration
DDD
D
z General Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a
SSSG
z Package Information
⑧... |
| Document |
 RCR1526SQ Data Sheet
PDF 99.06KB |
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Desde 2024. D4U Semiconductor.
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