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LBAT54LT1G |
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| Part Number | LBAT54LT1G |
| Manufacturer | Leshan Radio Company |
| Description | LESHAN RADIO COMPANY, LTD. Dual Series Schottky Barrier Diodes LBAT54LT1G These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping.... |
| Features |
s otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V)
V(BR)R CT IR
30 — —
Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc)
VF — VF — VF —
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr —
Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Current (DC)
VF — VF — IF —
Repetitive Peak Forward Current Non –Repetitive Peak Forward Current (t < 1.0 s) IFRM IFSM — — Typ — — 0.5 0.2... |
| Document |
 LBAT54LT1G Data Sheet
PDF 64.34KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LBAT54LT1 |
Leshan Radio Company |
Dual Series Schottky Barrier Diodes |
|
| 2 | LBAT54ALT1 |
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SCHOTTKY BARRIER DIODE |
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| 3 | LBAT54ALT1G |
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SCHOTTKY BARRIER DIODE |
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| 4 | LBAT54AWT1 |
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Dual Series Schottky Barrier Diodes |
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| 5 | LBAT54AWT1G |
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Dual Series Schottky Barrier Diodes |
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| 6 | LBAT54C |
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Dual Series Schottky Barrier Diodes |
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Desde 2024. D4U Semiconductor.
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