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LBAT54HT1G |
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| Part Number | LBAT54HT1G |
| Manufacturer | Leshan Radio Company |
| Description | LESHAN RADIO COMPANY, LTD. Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward v... |
| Features |
ate above 25°C Thermal Resistance Junction to Ambient
Junction Temperature Storage Temperature Range
PD
RθJA TJ T stg
200
1.57 635 125Max –55 to +150 * FR-4 Minimum Pad ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (I F = 0.1 mAdc) Forward Voltage (I F = 30 mAdc) Forward Voltage (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1) Forward Voltage (I F = 1.0 mAdc) Forward Voltage (I F = 10 mA... |
| Document |
 LBAT54HT1G Data Sheet
PDF 242.93KB |
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Desde 2024. D4U Semiconductor.
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