STU13N60M2 |
Part Number | STU13N60M2 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure t... |
Features |
Order codes VDS @ TJmax RDS(on) max ID
STP13N60M2 STU13N60M2
650 V
0.38 Ω
11 A
STW13N60M2
• Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are the... |
Document |
STU13N60M2 Data Sheet
PDF 713.80KB |
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