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STP6N60M2 |
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| Part Number | STP6N60M2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the compan... |
| Features |
Order codes
STF6N60M2 STP6N60M2 STU6N60M2
VDS @ TJmax
RDS(on) max
ID
650 V 1.2 Ω 4.5 A
• Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications AM15572v1 Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefor... |
| Document |
 STP6N60M2 Data Sheet
PDF 1.04MB |
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Desde 2024. D4U Semiconductor.
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