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C4704 |
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| Part Number | C4704 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC4704 Silicon NPN Epitaxial High Frequency Amplifier Feature • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ • S... |
| Features |
Max Unit Test condition
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Collector to base breakdown voltage
V(BR)CBO 200 — — V
IC = 10 µA, IE = 0
———————————————————————————————————————————
Collector to emitter breakdown voltage V(BR)CEO 200 — — V
IC = 1 mA, RBE = ∞
———————————————————————————————————————————
Emitter to base breakdown voltage
V(BR)EBO 4
——V
IE = 10 µA, IC = 0
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Collector cutoff current
ICBO
— — 10 µA VCB = 160 V, IE = 0
———————————————————————————————————————————
DC current transfer ratio
hFE*1
60 — 200
VCE = 5 V, IC ... |
| Document |
 C4704 Data Sheet
PDF 369.10KB |
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Desde 2024. D4U Semiconductor.
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