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FDC642P_F085 Fairchild Semiconductor P-Channel PowerTrench MOSFET Datasheet

FDC642P-F085 MOSFET P-CH 20V 4A SUPERSOT6


Fairchild Semiconductor
FDC642P_F085
Part Number FDC642P_F085
Manufacturer Fairchild Semiconductor
Description FDC642P_F085 P-Channel PowerTrench® MOSFET FDC642P_F085 P-Channel PowerTrench® MOSFET -20V, -4A, 100mΩ Features „ Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A „ Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A „ Fast switching speed „ Low gate charge(6.9nC typical) „ High performance trench techno...
Features „ Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A „ Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A „ Fast switching speed „ Low gate charge(6.9nC typical) „ High performance trench technology for extremely low rDS(on) „ SuperSOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick). „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Load switch „ Battery protection „ Power management June 2009 S D D SuperSOT TM-6 G D D S4 D5 D6 3G 2D 1D ©2009 Fairchild Semiconductor Corporation FDC642P_F085 Rev. A 1 www.fairchildsemi.com FDC642P_F085 P-Channel PowerT...

Document Datasheet FDC642P_F085 datasheet pdf (217.19KB)
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DigiKey
Stock 2804 In Stock
Price
2804 units: 263.52997 KRW
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FDC642P_F085 Distributor

part
Flip Electronics
FDC642P-F085
MOSFET P-CH 20V 4A SUPERSOT6
2804 units: 263.52997 KRW
Distributor
DigiKey

2804 In Stock
BuyNow BuyNow
part
onsemi
FDC642P_F085P
P-CHANNEL POWER MOSFET (Alt: FDC642P-F085P)
No price available
Distributor
Avnet Asia

30000 In Stock
No Longer Stocked
part
onsemi
FDC642P-F085P
MOSFET P-ChannelPowerMosfet
1 units: 0.66 USD
10 units: 0.568 USD
100 units: 0.424 USD
500 units: 0.334 USD
1000 units: 0.277 USD
3000 units: 0.235 USD
9000 units: 0.205 USD
24000 units: 0.194 USD
Distributor
Mouser Electronics

1170 In Stock
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part
onsemi
FDC642P-F085
FDC642P_F085 - P-Channel PowerTrench MOSFET, -20V, -4A, 100m
1000 units: 0.1428 USD
500 units: 0.1512 USD
100 units: 0.1579 USD
25 units: 0.1646 USD
1 units: 0.168 USD
Distributor
Rochester Electronics

1163 In Stock
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part
onsemi
FDC642P-F085P
POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 20V, 0.065OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
1362 units: 0.1313 USD
287 units: 0.147 USD
1 units: 0.315 USD
Distributor
Quest Components

5657 In Stock
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onsemi
FDC642P-F085P
INSTOCK
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Distributor
Chip 1 Exchange

325000 In Stock
No Longer Stocked
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onsemi
FDC642P_F085P
P-CHANNEL POWER MOSFET - Tape and Reel (Alt: FDC642P-F085P)
No price available
Distributor
Avnet Americas

0 In Stock
No Longer Stocked
part
onsemi
FDC642P-F085
Stock, ship today
1 units: 0.14 USD
Distributor
Flip Electronics

2804 In Stock
No Longer Stocked





FDC642P_F085 Similar Datasheet

Part Number Description
FDC642P-F085
manufacturer
ON Semiconductor
P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features  Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A  Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A  Fast Switching Speed  Low Gate Charge (6.9 nC Typical)  High Performance Trench Technology for Extremely Low RDS(on)  SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick)  AEC−Q101 Qualified and PPAP Capable  This Device is Pb−Free and is RoHS Compliant Applications  Load Switch  Battery Protection  Power management MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Voltage Gate...
FDC642P-F085P
manufacturer
ON Semiconductor
P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features  Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A  Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A  Fast Switching Speed  Low Gate Charge (6.9 nC Typical)  High Performance Trench Technology for Extremely Low RDS(on)  SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick)  AEC−Q101 Qualified and PPAP Capable  This Device is Pb−Free and is RoHS Compliant Applications  Load Switch  Battery Protection  Power management MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Voltage Gate...




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