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FDC642P_F085 |
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| Part Number | FDC642P_F085 |
| Manufacturer | Fairchild Semiconductor |
| Description | FDC642P_F085 P-Channel PowerTrench® MOSFET FDC642P_F085 P-Channel PowerTrench® MOSFET -20V, -4A, 100mΩ Features Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A Typ rDS(on) = 75.3mΩ at VGS = -2.5V,... |
| Features |
Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A Fast switching speed
Low gate charge(6.9nC typical)
High performance trench technology for extremely low rDS(on)
SuperSOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick).
RoHS Compliant
Qualified to AEC Q101
Applications
Load switch Battery protection Power management
June 2009
S D D
SuperSOT TM-6
G D D
S4 D5 D6
3G 2D 1D
©2009 Fairchild Semiconductor Corporation FDC642P_F085 Rev. A
1
www.fairchildsemi.com
FDC642P_F085 P-Channel PowerT... |
| Document |
 FDC642P_F085 Data Sheet
PDF 217.19KB |
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