FQA7N65C |
Part Number | FQA7N65C |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 12 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability February 2006 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched... |
Document |
FQA7N65C Data Sheet
PDF 714.03KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQA7N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
2 | FQA7N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
3 | FQA7N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
4 | FQA7N80C_F109 |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FQA7N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
6 | FQA7N90M |
Fairchild Semiconductor |
900V N-Channel MOSFET |