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D1220 |
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| Part Number | D1220 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1220 2SD1220 Power Amplifier Applications Unit: mm • Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics ... |
| Features |
onductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-02-05
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 150 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (Note)
VCE = 5 V, IC ... |
| Document |
 D1220 Data Sheet
PDF 143.79KB |
Desde 2024. D4U Semiconductor.
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