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K223 |
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| Part Number | K223 |
| Manufacturer | Sanyo |
| Description | Ordering number:EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features · Ultrahigh withstand voltage (VGDS≥–80V). · Due to low gate leakage currents even at high volt... |
| Features |
· Ultrahigh withstand voltage (VGDS≥ –80V). · Due to low gate leakage currents even at high voltage, the 2SK223 is suitable for a wide range of application (IGDL=1nA/VDS=50V, ID=1mA). · High yfs(yfs=20mS/VDS=30V, f=1kHz). Package Dimensions unit:mm 2019B [2SK223] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG PD Tj Tstg Electrical Characteristics at Ta = 25˚C 1.3 Condition... |
| Document |
 K223 Data Sheet
PDF 98.53KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K2200 |
Toshiba Semiconductor |
2SK2200 |
|
| 2 | K2200EH70 |
Littelfuse |
High Energy Bidirectional SIDACs |
|
| 3 | K2200G |
JIEJIE |
Sidac |
|
| 4 | K2200G |
Sunmate |
Axial Leaded Silicon Bilateral Voltage Triggered |
|
| 5 | K2200GH |
Littelfuse |
High Energy Bidirectional SIDACs |
|
| 6 | K2200GHU |
Littelfuse |
High Energy Unidirectional SIDACs |
|
Desde 2024. D4U Semiconductor.
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