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C3515 |
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| Part Number | C3515 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control... |
| Features |
Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
ICBO
VCB = 300 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CBO IC = 0.1 mA, IE = 0
V (BR) CEO IC = 1 mA, IB = 0
hFE (1) (Note 2)
VCE = 10 V, IC = 20 mA
hFE (2) VCE (sat) VBE (sat)
fT Cob
VCE = 10 V, IC = 20 mA IC = 20 mA, IB = 2 mA IC = 20 mA, IB = 2 mA VCE = 10 V, IC = 20 mA VCB = 20 V... |
| Document |
 C3515 Data Sheet
PDF 144.09KB |
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