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IXTH75N15 |
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| Part Number | IXTH75N15 |
| Manufacturer | IXYS |
| Description | High Current Power MOSFET N-Channel Enhancement Mode IXTH 75N15 IXTT 75N15 VDSS ID25 RDS(on) = 150 V = 75 A = 23 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight... |
| Features |
z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250µA
IGSS VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Characteristic Values
Min. Typ.
Max.
150 V
2.0 4.0 V
±100 nA
25 µA 250 µA
23 mΩ
Advantages
z Easy ... |
| Document |
 IXTH75N15 Data Sheet
PDF 579.71KB |
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Desde 2024. D4U Semiconductor.
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