NCE01H14T |
Part Number | NCE01H14T |
Manufacturer | NCE Power Semiconductor |
Description | The NCE01H14T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =140A RDS... |
Features |
● VDS =100V,ID =140A RDS(ON) < 5.5mΩ @ VGS=10V (Typ4.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 top view Package Marking and Ordering Information Device Marking Device Device Pack... |
Document |
NCE01H14T Data Sheet
PDF 320.64KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NCE01H14 |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
2 | NCE01H14C |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | NCE01H14D |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
4 | NCE01H10 |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
5 | NCE01H10D |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
6 | NCE01H11 |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |