AM3406 |
Part Number | AM3406 |
Manufacturer | AiT Semiconductor |
Description | FEATURES The AM3406 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high dens... |
Features |
The AM3406 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON).
This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
30V/6.0A, RDS(ON) = 20mΩ(typ.) @VGS = 10V 30V/4.8A, RDS(ON) = 27mΩ(typ.) @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum D... |
Document |
AM3406 Data Sheet
PDF 394.48KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AM3400 |
AXElite |
N-Channel Enhancement Mode MOSFET | |
2 | AM3400 |
AiT Semiconductor |
30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
3 | AM3400A |
AiT Semiconductor |
30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
4 | AM3401 |
AXElite |
P-Channel Enhancement Mode MOSFET | |
5 | AM3401 |
AiT Semiconductor |
-30V P-CHANNEL ENHANCEMENT MODE MOSFET | |
6 | AM3402 |
AXElite |
N-Channel Enhancement Mode MOSFET |