NCE75H21B |
Part Number | NCE75H21B |
Manufacturer | NCE Power |
Description | The NCE75H21B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 75V,ID =210A RDS... |
Features |
● VDS = 75V,ID =210A RDS(ON) < 4.5mΩ @ VGS=10V (Typ:3.8mΩ) Schematic diagram ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device P... |
Document |
NCE75H21B Data Sheet
PDF 375.49KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NCE75H21 |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET | |
2 | NCE75H21D |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | NCE75H21T |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET | |
4 | NCE75H21TB |
VBsemi |
N-Channel MOSFET | |
5 | NCE75H21TB |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET | |
6 | NCE75H26T |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET |