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NCE30H12K |
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| Part Number | NCE30H12K |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE30H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =120A RDS(... |
| Features |
● VDS =30V,ID =120A RDS(ON) <3.5mΩ @ VGS=10V (Typ:3.0mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device P... |
| Document |
 NCE30H12K Data Sheet
PDF 439.70KB |
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Desde 2024. D4U Semiconductor.
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