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CS8N65FA9H |
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| Part Number | CS8N65FA9H |
| Manufacturer | HUAJING MICROELECTRONICS |
| Description | CS8N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 8 45 0... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤1.3Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:14pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
Drain-to-Source Voltage
650
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt... |
| Document |
 CS8N65FA9H Data Sheet
PDF 321.46KB |
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Desde 2024. D4U Semiconductor.
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