Busque con el número de pieza junto con el fabricante o la descripción
IPD250N06N3G |
Click to view a larger image
| Part Number | IPD250N06N3G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channe... |
| Features |
• Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPD250N06N3 G Product Summary V DS R DS(on),max ID IPD250N06N3 G 60 V 25 mΩ 28 A Package Marking PG-TO252-3 250N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) I D,pulse Avalanche energy, single pulse3)... |
| Document |
 IPD250N06N3G Data Sheet
PDF 304.05KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD25CN10N |
Infineon |
Power-Transistor |
|
| 2 | IPD25CN10N |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPD25CN10NG |
Infineon Technologies |
Power-Transistor |
|
| 4 | IPD25CNE8NG |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPD25N06S2-40 |
Infineon Technologies |
Power-Transistor |
|
| 6 | IPD25N06S4L-30 |
Infineon Technologies |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
|