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SKM100GAL123D |
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| Part Number | SKM100GAL123D |
| Manufacturer | Semikron |
| Description | Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min.... |
| Features |
• MOS input (voltage controlled) • N channel, Homogeneous Si • Low inductance case • Very low tail current with low temperature dependence • High short circuit capability, self limiting to 6 * Icnom • Latch-up free • Fast & soft inverse CAL diodes8) • Isolated copper baseplate using DCB Direct Copper Bon- ding Technology • Large clearance (10 mm) and creepage distances (20 mm). Typical Applications: → B 6 -115 • Switching (not for linear use) 1) Tcase = 25 °C, unless otherwise specified 2) IF = – IC, VR = 600 V, – diF/dt = 800 A/µs, VGE = 0 V 3) Use VGEoff = -5 ... -15 V 5) See fig. 2 + 3; RG... |
| Document |
 SKM100GAL123D Data Sheet
PDF 942.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SKM100GAL12F4 |
Semikron |
IGBT |
|
| 2 | SKM100GAL12T4 |
Semikron International |
IGBT |
|
| 3 | SKM100GAL163D |
Semikron International |
IGBT |
|
| 4 | SKM100GAL17E4 |
Semikron |
IGBT |
|
| 5 | SKM100GAR123D |
Semikron |
IGBT |
|
| 6 | SKM100GAR12F4 |
Semikron |
IGBT |
|
| 7 | SKM100GAR17E4 |
Semikron |
IGBT |
|
| 8 | SKM100GAxxxD |
Semikron International |
SEMITRANS IGBT |
|
| 9 | SKM100GB063D |
Semikron International |
IGBT |
|
| 10 | SKM100GB123D |
Semikron International |
IGBT |
|
Desde 2024. D4U Semiconductor.
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