Busque con el número de pieza junto con el fabricante o la descripción
D2110 |
Click to view a larger image
| Part Number | D2110 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V APPLICATIONS ·... |
| Features |
herwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞
80
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
80
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB=B 4mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=B 40mA
VBE(sat)-1 VBE(sat)-2
ICBO ICEO hFE
Base-Emitter Saturation Voltage
i.cnBase-Emitter Saturation Voltage .iscsemCollector Cutoff Current wwwCollector Cutoff Current
IC= 2A; IB=B 4mA IC= 4A; IB=B... |
| Document |
 D2110 Data Sheet
PDF 234.54KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|