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P9N70 |
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| Part Number | P9N70 |
| Manufacturer | Good-Ark |
| Description | StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS al... |
| Features |
①
dv/dt
Peak Diode Recovery dv/dt ③
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max. 7.5 4.7 30 115 0.92 ±30 230 7.5 15.5 4.5
–55 to +175 300(1.6mm from case) 10 Ibf ●in(1.1N ●m) Units A W W/ْ C V mJ A mJ V/ns ْC Thermal Resistance Parameter Min. Typ. Max. RθJC Junction-to-case — — 1.09 RθCS Case-to-Sink,Flat,Greased Surface — — 0.50 RθJA Junction-to-Ambient — — 62.5 Units ْC/W 1 SSFP9N70 StarMOST Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Mi... |
| Document |
 P9N70 Data Sheet
PDF 122.21KB |
Desde 2024. D4U Semiconductor.
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