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P11NM50N |
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| Part Number | P11NM50N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s ... |
| Features |
Order codes
STD11NM50N STF11NM50N STP11NM50N
VDSS @TJmax
RDS(on) max
550 V
< 0.47 Ω
ID 8.5 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 1 DPAK 3 2 1 TO-220FP 3 2 1 TO-220 Figur... |
| Document |
 P11NM50N Data Sheet
PDF 452.68KB |
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