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IPD50N06S4L-12 |
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| Part Number | IPD50N06S4L-12 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche... |
| Features |
• N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD50N06S4L-12 Product Summary V DS R DS(on),max ID 60 V 12 mΩ 50 A PG-TO252-3-11 Type IPD50N06S4L-12 Package Marking PG-TO252-3-11 4N06L12 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=25A Avalanche current, single p... |
| Document |
 IPD50N06S4L-12 Data Sheet
PDF 159.97KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD50N06S4L-08 |
Infineon |
Power Transistor |
|
| 2 | IPD50N06S4-09 |
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| 3 | IPD50N06S2-14 |
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| 4 | IPD50N06S2L-13 |
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| 5 | IPD50N06S3-07 |
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| 6 | IPD50N06S3-15 |
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|
Desde 2024. D4U Semiconductor.
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