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IPD50N04S3-08 |
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| Part Number | IPD50N04S3-08 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100%... |
| Features |
• N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPD50N04S3-08 Product Summary V DS R DS(on),max ID 40 V 7.5 mΩ 50 A PG-TO252-3-11 Type IPD50N04S3-08 Package Marking PG-TO252-3-11 3N0408 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=50 A Gate source v... |
| Document |
 IPD50N04S3-08 Data Sheet
PDF 181.43KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD50N04S3-09 |
Infineon |
Power Transistor |
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| 2 | IPD50N04S4-08 |
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Power Transistor |
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| 3 | IPD50N04S4-10 |
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| 4 | IPD50N04S4L-08 |
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| 5 | IPD50N03S2-07 |
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| 6 | IPD50N03S2L-06 |
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Power Transistor |
|
Desde 2024. D4U Semiconductor.
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