Busque con el número de pieza junto con el fabricante o la descripción
IPD50N03S4L-06 |
Click to view a larger image
| Part Number | IPD50N03S4L-06 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | OptiMOS®-T2 Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanc... |
| Features |
l resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
-
- 2.7 K/W - 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=20µA
I DSS
V DS=30V, V GS=0V, T j=25°C
V DS=30V, V GS=0V, T j=125°C2)
I GSS
V GS=16V, V DS=0V
R DS(on) V GS=4.5V, I D=25A V GS= 10V, I D=50 A
30 -
-V
1.0 1.5 2.2... |
| Document |
 IPD50N03S4L-06 Data Sheet
PDF 131.66KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD50N03S2-07 |
Infineon |
Power Transistor |
|
| 2 | IPD50N03S2L-06 |
Infineon |
Power Transistor |
|
| 3 | IPD50N04S3-08 |
Infineon |
Power Transistor |
|
| 4 | IPD50N04S3-09 |
Infineon |
Power Transistor |
|
| 5 | IPD50N04S4-08 |
Infineon |
Power Transistor |
|
| 6 | IPD50N04S4-10 |
Infineon |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
|