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S20C35 |
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| Part Number | S20C35 |
| Manufacturer | Mospec Semiconductor |
| Description | MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and meta... |
| Features |
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
Features Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
ESD: 4KV(Min.) Human-Body Model In compliance with EU RoHs 2002/95/EC dir... |
| Document |
 S20C35 Data Sheet
PDF 76.39KB |
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Desde 2024. D4U Semiconductor.
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