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GAL18V10 |
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| Part Number | GAL18V10 |
| Manufacturer | Lattice Semiconductor |
| Description | The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS ci... |
| Features |
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5.5 ns Maximum from Clock Input to Data Output — TTL Compatible 16 mA Outputs — UltraMOS® Advanced CMOS Technology • LOW POWER CMOS — 75 mA Typical Icc • ACTIVE PULL-UPS ON ALL PINS • E2 CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — 100% Tested/100% Yields — High Speed Electrical Erasure (<100ms) — 20 Year Data Retention • TEN OUTPUT LOGIC MACROCELLS — Uses Standard 22V10 Macrocell Architecture — Maximum Flexibility for Complex Logic Designs • PRELOAD AND POWER-ON RESET OF REGISTERS — ... |
| Document |
 GAL18V10 Data Sheet
PDF 265.88KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GAL16LV8 |
Lattice Semiconductor |
Low Voltage E2CMOS PLD Generic Array Logic |
|
| 2 | GAL16V8 |
Lattice Semiconductor |
High Performance E2CMOS PLD Generic Array Logic |
|
| 3 | GAL16V8-15LJ |
ETC |
CMOS Electrically Erasable Programmable Logic Device |
|
| 4 | GAL16V8-25LP |
ETC |
CMOS Electrically Erasable Programmable Logic Device |
|
| 5 | GAL16V8-883 |
Lattice Semiconductor |
High Performance E2CMOS PLD Generic Array Logic |
|
| 6 | GAL16V8A |
Lattice Semiconductor |
High Performance E2CMOS PLD Generic Array Logic |
|
Desde 2024. D4U Semiconductor.
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