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SGB20N60 |
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| Part Number | SGB20N60 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | SGP20N60 SGB20N60, SGW20N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: -... |
| Features |
dering Code Q67041-A4712-A2 Q67041-A4712-A4 Q67040-S4236
Value 600
40 20 80 80
±20 115
Unit V A
V mJ
10 179 -55...+150
µs W °C
1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1
Mar-00
SGP20N60 SGB20N60, SGW20N60
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Symbol RthJC RthJA Conditions TO-247AC Max. Value 0.7 40 Unit K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitter breakdown vol... |
| Document |
 SGB20N60 Data Sheet
PDF 263.47KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SGB20UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
|
| 2 | SGB2400 |
RF Micro Devices |
DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER |
|
| 3 | SGB2433Z |
RF Micro Devices |
DC to 4GHZ ACTIVE BIAS GAIN BLOCK |
|
| 4 | SGB25UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
|
| 5 | SGB-2233 |
ETC |
DC-4.5GHz Active Bias Gain Block |
|
| 6 | SGB-2233 |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK |
|
Desde 2024. D4U Semiconductor.
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