GAL16V8 |
Part Number | GAL16V8 |
Manufacturer | Lattice Semiconductor |
Description | The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance availa... |
Features |
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.0 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology • 50% to 75% REDUCTION IN POWER FROM BIPOLAR — 75mA Typ Icc on Low Power Device — 45mA Typ Icc on Quarter Power Device • ACTIVE PULL-UPS ON ALL PINS • E2 CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — 100% Tested/100% Yields — High Speed Electrical Erasure (<100ms) — 20 Year Data Retention • EIGHT OUTPUT LOGIC MACROCELLS — Maximum Flexibility for Complex Logic Designs — Programmable Output Polarity — Als... |
Document |
GAL16V8 Data Sheet
PDF 722.63KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | GAL16V8-15LJ |
ETC |
CMOS Electrically Erasable Programmable Logic Device | |
2 | GAL16V8-25LP |
ETC |
CMOS Electrically Erasable Programmable Logic Device | |
3 | GAL16V8-883 |
Lattice Semiconductor |
High Performance E2CMOS PLD Generic Array Logic | |
4 | GAL16V8A |
Lattice Semiconductor |
High Performance E2CMOS PLD Generic Array Logic | |
5 | GAL16V8A-10 |
National Semiconductor |
Generic Array Logic | |
6 | GAL16V8A-12 |
National Semiconductor |
Generic Array Logic |