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HX4N60 |
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| Part Number | HX4N60 |
| Manufacturer | TIANJIN HUANXIN TECHNOLOGY |
| Description | The HX4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, moto... |
| Features |
z RDS(ON) =2.50Ω@VGS = 10 V z Low gate charge ( typical 16nC) z High ruggedness z Fast switching capability z Avalanche energy specified z Improved dv/dt capability
■ Symbol ■ Ordering Information Order Number Normal Lead Free Plating HX4N60-TA3-T HX4N60L-TA3-T HX4N60-TF3-T HX4N60L-TF3-T HX4N60-TM3-T HX4N60L-TM3-T HX4N60-TN3-T HX4N60L-TN3-T HX4N60-TN3-R HX4N60L-TN3-R Note:Pin Assignment: G:Gate D:Drain S:Source HX4N60L-TA3-T （1）Packing Type （2）Package Type （3）Lead Plating Package TO-220 TO-220F TO-251 TO-252 TO-252 Pin Assignment 1 23 G DS G DS G DS G DS G DS Packing Tube T... |
| Document |
 HX4N60 Data Sheet
PDF 494.03KB |
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