MRF9030LR1 Freescale Semiconductor Transistor, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

MRF9030LR1

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Part Number	MRF9030LR1
Manufacturer	Freescale Semiconductor
Description	NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadb...
Features	• Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Document Number: MRF9030 Rev. 8, 9/2008 MRF9030LR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 360B - 05, STYLE 1 NI - 360 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation ...
Document	MRF9030LR1 Data Sheet PDF 345.55KB

No.	Parte #	Fabricante	Descripción
1	MRF9030LR1	Motorola	RF Power Field Effect Transistors
2	MRF9030LSR1	Motorola	RF Power Field Effect Transistors
3	MRF9030MBR1	Freescale Semiconductor	RF Power Field Effect Transistors
4	MRF9030MBR1	Freescale Semiconductor	RF POWER FIELD EFFECT TRANSISTORS
5	MRF9030MR1	Freescale Semiconductor	RF Power Field Effect Transistors
6	MRF9030MR1	Freescale Semiconductor	RF POWER FIELD EFFECT TRANSISTORS