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G8376-03 |
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| Part Number | G8376-03 |
| Manufacturer | Hamamatsu Corporation |
| Description | PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR (near infrared) detectors that feature high-speed response and low noise. Various active area sizes are pro... |
| Features |
Applications
l Low noise, low dark current l Low terminal capacitance l 3-pin TO-18 package
l NIR (near infrared) photometry l Optical communication
s Specifications / Absolute maximum ratings
Active area (mm) φ0.04 φ0.08 φ0.3 φ0.5 Reverse voltage VR (V) Absolute maximum ratings Operating Storage temperature temperature Topr Tstg (°C) (°C)
Type No.
Window material
Package
G8376-01 G8376-02 G8376-03 G8376-05
B orosilicate glass with anti-reflective coating (optimized for 1.55 µ m peak)
TO-18
20
-40 to +85
-55 to +125
s Electrical and optical characteristics (Typ. Ta=25 °C, unless ... |
| Document |
 G8376-03 Data Sheet
PDF 215.60KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G8376-01 |
Hamamatsu Corporation |
InGaAs PIN photodiode |
|
| 2 | G8376-02 |
Hamamatsu Corporation |
InGaAs PIN photodiode |
|
| 3 | G8376-05 |
Hamamatsu Corporation |
InGaAs PIN photodiode |
|
| 4 | G8376 |
Hamamatsu Corporation |
InGaAs PIN photodiode |
|
| 5 | G8370 |
Hamamatsu Corporation |
InGaAs PIN photodiode |
|
| 6 | G8370-01 |
Hamamatsu Corporation |
InGaAs PIN photodiode |
|
Desde 2024. D4U Semiconductor.
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