2SA1016 |
Part Number | 2SA1016 |
Manufacturer | SEMTECH |
Description | ST 2SA1016 PNP Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic ... |
Features |
EB=4V
Collector Emitter Saturation Voltage at -IC=10mA, -IB=1mA
Gain Bandwidth Product at -VCE=6V, -IC=1mA
Output Capacitance at -VCB=10V, f=1MHz
Noise Level at VCC=30V, IC=1mA at Rg=56KΩ,VG=77dB/1kHz
Noise Peak Level at VCC=30V, IC=1mA at Rg=56KΩ,VG=77dB/1kHz
Symbol
hFE hFE hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) fT COB
CNO(ave)
CNO(peak)
Min.
160 280 480 120 100
5 -
-
-
G S P FORM A IS AVAILABLE
Typ.
110 2.2
-
-
Max.
320 560 960
1 1 0.5 -
35
200
Unit
V V V µA µA V MHz pF
mV
mV
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany list... |
Document |
2SA1016 Data Sheet
PDF 387.23KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA101 |
ETC |
Ge PNP Drift Transistor | |
2 | 2SA1010 |
NEC |
SILICON POWER TRANSISTOR | |
3 | 2SA1010 |
INCHANGE |
PNP Transistor | |
4 | 2SA1010 |
SavantIC |
Silicon POwer Transistors | |
5 | 2SA1011 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
6 | 2SA1011 |
Inchange Semiconductor |
POWER TRANSISTOR |