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KF11N50P |
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| Part Number | KF11N50P |
| Manufacturer | KEC |
| Description | This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic bal... |
| Features |
VDSS= 500V, ID= 11A Drain-Source ON Resistance : RDS(ON)=0.52 (Max) @VGS = 10V Qg(typ.) = 26nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL
KF11N50P KF11N50F
Drain-Source Voltage
VDSS
500
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID
IDP EAS EAR dv/dt
11 11* 7 7* 33 33*
400
6.6
4.5
Drain Power Dissipation
Tc=25 Derate above 25
PD
178 1.43
46.3 0.37
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Th... |
| Document |
 KF11N50P Data Sheet
PDF 859.52KB |
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Desde 2024. D4U Semiconductor.
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