G7N60A4D Fairchild Semiconductor HGTG7N60A4D Datasheet. existencias, precio

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G7N60A4D

Fairchild Semiconductor
G7N60A4D
G7N60A4D G7N60A4D
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Part Number G7N60A4D
Manufacturer Fairchild Semiconductor
Description Data Sheet HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high ...
Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49333...

Document Datasheet G7N60A4D Data Sheet
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