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ME06N10 |
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| Part Number | ME06N10 |
| Manufacturer | Matsuki |
| Description | The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to min... |
| Features |
● RDS(ON)≦200mΩ@VGS=10V ● RDS(ON)≦260mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-252-3L) Top View Ordering Information: ME06N10 (Pb-free) ME06N10-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current TC=25℃ TC=70℃ ID Pulsed Drain Current IDM Maximu... |
| Document |
 ME06N10 Data Sheet
PDF 858.89KB |
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