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APT50GS60SRDQ2 |
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| Part Number | APT50GS60SRDQ2 |
| Manufacturer | Microsemi (https://www.microsemi.com/) |
| Description | APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS™ series is based on thin wafer non-punch throu... |
| Features |
Typical Applications
APT50GS60BRDQ2(G) APT50GS60SRDQ2(G)
• Fast Switching with low EMI • Very Low EOFF for Maximum Efficiency • Short circuit rated • Low Gate Charge • ZVS Phase Shifted and other Full Bridge • Half Bridge • High Power PFC Boost • Welding Single die IGBT with separate DQ diode die • Tight parameter distribution • Induction heating • Easy paralleling • High Frequency SMPS • RoHS Compliant Absolute Maximum Ratings Symbol Parameter Rating IC1 Continuous Collector Current TC = @ 25°C IC1 Continuous Collector Current TC = @ 100°C ICM Pulsed Collector Current 1 VGE Gate-... |
| Document |
 APT50GS60SRDQ2 Data Sheet
PDF 327.87KB |
Similar Datasheet
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| 1 | APT50GS60SRDQ2G |
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| 2 | APT50GS60BRDQ2 |
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| 3 | APT50GS60BRDQ2G |
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Desde 2024. D4U Semiconductor.
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