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| Part Number | C2979 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC2979 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collecto... |
| Features |
7 —
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Max Unit —V
—V
—V
100 µA 100 µA — — 1.0 V
1.5 V
1.0 µs 3.0 µs 1.0 µs
Test conditions IC = 0.2 A, RBE = ∞, L = 100 mH IC = 3 A, IB1 = 0.9 A, IB2 = –0.6 A, VBE = –5.0 V, L = 180 µH, Clamped IE = 10 mA, IC = 0 VCB = 750 V, IE = 0 VCE = 650 V, RBE = ∞ VCE = 5 V, IC = 0.3 A*1 VCE = 5 V, IC = 1.5 A*1 IC = 0.75 A, IB = 0.15 A*1 IC = 1.5 A, IB1 = 0.3 A, IB2 = –0.75 A, VCC ≅ 250 V Collector power dissipation PC (W) Collector current IC (A) Maximum Collector Dissipation Curve 60 40 20 0 50 100 150 Case temperature TC (°C) TC µs mPWs D=C1O0=pme2sr5a°tCion Area of ... |
| Document |
 C2979 Data Sheet
PDF 39.45KB |
Desde 2024. D4U Semiconductor.
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