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QL83I6S-B |
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| Part Number | QL83I6S-B |
| Manufacturer | QSI |
| Description | QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL83I6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer TENTATIVE 315-9, Cheonheung-ri, Sungger-eup... |
| Features |
- Visible Light Output : λp = 830 nm
- Optical Power Output : 30mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3)
Fig. 1 QL85I6SA
Fig. 2 QL85I6SB
Fig. 3 QL85I6SC
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Symbols
Values
Unit
Optical Output Power Laser Diode Reverse
Voltage Photo Diode Reverse
Voltage Operating Temperature
Storage Temperature
P V
V Topr Tstg
30 2
30 −10 ~ +60 −40 ~ +85
mW V
V °C °C
... |
| Document |
 QL83I6S-B Data Sheet
PDF 149.56KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | QL83I6S-A |
QSI |
LASER DIODE |
|
| 2 | QL83I6S-C |
QSI |
LASER DIODE |
|
| 3 | QL8325 |
ETC |
LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM |
|
| 4 | QL8025 |
ETC |
LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM |
|
| 5 | QL8050 |
ETC |
LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM |
|
| 6 | QL8150 |
ETC |
LOW POWER FPGA COMBINING PERFORMANCE DENSITY AND EMBEDED RAM |
|
Desde 2024. D4U Semiconductor.
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