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QL85F6S-B |
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| Part Number | QL85F6S-B |
| Manufacturer | QSI |
| Description | QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL85F6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city... |
| Features |
- Visible Light Output : λp = 850 nm
- Optical Power Output : 10mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3)
Fig. 1 QL85F6SA
Fig. 2 QL85F6SB
Fig. 3 QL85F6SC
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Symbols
Values
Unit
Optical Output Power Laser Diode Reverse
Voltage Photo Diode Reverse
Voltage Operating Temperature
Storage Temperature
P V
V Topr Tstg
12 2
30 −10 ~ +60 −40 ~ +85
mW V
V °C °C
... |
| Document |
 QL85F6S-B Data Sheet
PDF 183.88KB |
Desde 2024. D4U Semiconductor.
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