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FY3ABJ-03 |
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| Part Number | FY3ABJ-03 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | MITSUBISHI Pch POWER MOSFET FY3ABJ-03 HIGH-SPEED SWITCHING USE FY3ABJ-03 OUTLINE DRAWING Dimensions in mm 6.0 4.4 5.0 1.8 MAX. 0.4 1.27 SOURCE GATE DRAIN No-conta... |
| Features |
50 0.07
Unit V V A A A A A W °C °C g Sep.1998
L = 10µH
MITSUBISHI Pch POWER MOSFET
FY3ABJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage
(Tch = 25°C)
Test conditions ID = –1mA, VDS = 0V VGS = ±20V, VDS = 0V VDS = –30V, VGS = 0V ID = –1mA, VDS = –10V ID = –3A, VGS = –10V ID = –1.5A, VGS = –4V ID = –3A, VGS = –10V ID = –3A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz Limits Min. –30 — — –1.5 — — — — — — — — — — — — —... |
| Document |
 FY3ABJ-03 Data Sheet
PDF 38.27KB |
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