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2SJ133 |
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| Part Number | 2SJ133 |
| Manufacturer | NEC |
| Description | of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these cir... |
| Features |
• Gate drive available at logic level (VGS = –4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω) • 2SJ133-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Conditions Drain to source voltage VDSS VGS = 0 Gate to source voltage VGSS VDS = 0 Drain curre... |
| Document |
 2SJ133 Data Sheet
PDF 128.23KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ130 |
Hitachi Semiconductor |
P-Channel MOSFET |
|
| 2 | 2SJ130L |
Hitachi Semiconductor |
P-Channel MOSFET |
|
| 3 | 2SJ130S |
Hitachi Semiconductor |
P-Channel MOSFET |
|
| 4 | 2SJ132 |
NEC |
MOS FIELD EFFECT POWER TRANSISTORS |
|
| 5 | 2SJ132-Z |
NEC |
MOS FIELD EFFECT POWER TRANSISTORS |
|
| 6 | 2SJ133 |
ETC |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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