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IXTH200N10T |
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| Part Number | IXTH200N10T |
| Manufacturer | IXYS Corporation |
| Description | TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C... |
| Features |
International standard packages 175°C Operating Temperature Avalanche Rated Low RDS(on)
Advantages
Easy to mount Space savings High power density
Applications
Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Switch High Current Switching Applications
© 2008 IXYS CORPORATION, All rights reserved
DS99654A(10/08)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs VDS = 10V, ID = 60A, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 0... |
| Document |
 IXTH200N10T Data Sheet
PDF 164.19KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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