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IXTA110N055T |
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| Part Number | IXTA110N055T |
| Manufacturer | IXYS Corporation |
| Description | Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T IXTP110N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 110 7.0 V A mΩ Symbol VDSS VDGR VGSM ID... |
| Features |
Ultra-low On Resistance
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Advantages Easy to mount Space savings High power density
Applications Automotive - Motor Drives - High Side Switch - 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99625 (11/06)
IXTA110N055T IXTP110N055T
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 0.5 ID25, Note 1
Ciss Coss Crss
VGS ... |
| Document |
 IXTA110N055T Data Sheet
PDF 207.00KB |
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Desde 2024. D4U Semiconductor.
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