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F20UP60DN |
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| Part Number | F20UP60DN |
| Manufacturer | Fairchild Semiconductor |
| Description | FFPF20UP60DN FFPF20UP60DN Features • High Speed Switching, trr < 70ns @ IF = 10A • High Reverse Voltage and High Reliability • RoHS compliant Applications • General Purpose • Switching Mode Power Sup... |
| Features |
• High Speed Switching, trr < 70ns @ IF = 10A • High Reverse Voltage and High Reliability • RoHS compliant Applications • General Purpose • Switching Mode Power Supply • Boost Diode in continuous mode power factor corrections • Power switching circuits November 2007 tm 20A, 600V Ultrafast Rectifier The FFPF20UP60DN is a ultrafast rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. It’s low st... |
| Document |
 F20UP60DN Data Sheet
PDF 226.21KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F20UP20DN |
Fairchild Semiconductor |
FFPF20UP20DN |
|
| 2 | F20U20S |
Fairchild Semiconductor |
FFPF20U20S |
|
| 3 | F2001 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 4 | F2002 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 5 | F2003 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 6 | F2004 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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