KM29W16000ATS |
Part Number | KM29W16000ATS |
Manufacturer | Samsung Electronics |
Description | The KM29W16000A is a 2M(2,097,152)x8bit NAND Flash Memory with a spare 64K(65,536)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program oper... |
Features |
• Voltage Supply : 2.7V ~ 5.5V • Organization - Memory Cell Array : (2M + 64K)bit x 8bit - Data Register : (256 + 8)bit x8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte - Block Erase : (4K + 128)Byte - Status Register • 264-Byte Page Read Operation - Random Access : 10 µs(Max.) - Serial Page Access : 80ns(Min.) • Fast Write Cycle Time - Program time : 250 µs(typ.) - Block Erase time : 2ms (typ.) • Command/Address/Data Multiplexed I/O port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 1M Progr... |
Document |
KM29W16000ATS Data Sheet
PDF 246.68KB |
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