Busque con el número de pieza junto con el fabricante o la descripción
2N2102 |
Click to view a larger image
| Part Number | 2N2102 |
| Manufacturer | CDIL |
| Description | Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation ... |
| Features |
IC=100µA, IE=0 IE=100µA, IC=0
Collector Cut Off Current
ICBO
VCB=60V, IE=0
VCB=60V, IE=0, Ta=150ºC
Emitter Cut Off Current
IEBO
VEB=5V, IC=0
DC Current Gain
hFE IC=0.1mA, VCE=10V
*IC=10mA, VCE=10V
*IC=10mA, VCE=10V, Ta=55ºC *IC=150mA, VCE=10V *IC=500mA, VCE=10V *IC=1A, VCE=10V
MIN 80 65 120 120 7
20 35 20 40 25 10
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
**Rth (j-a) is measured with the device soldered into a typical printed circuit board
2N2102Rev_1 040904E
UNIT V V V V A
mW mW/ ºC
W mW/ ºC
ºC
ºC/W ºC/W
TYP MAX
2 2 2
UNIT V V V V V nA µA nA
120
Continental Device... |
| Document |
 2N2102 Data Sheet
PDF 92.24KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N2100 |
Motorola |
PNP Transistor |
|
| 2 | 2N2102 |
NTE |
Silicon NPN Transistor |
|
| 3 | 2N2102 |
STMicroelectronics |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 4 | 2N2102 |
Comset Semiconductor |
Silicon Planar Epitaxial NPN transistor |
|
| 5 | 2N2102 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | 2N2102 |
Multicomp |
Transistor |
|
Desde 2024. D4U Semiconductor.
|