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FDC365P |
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| Part Number | FDC365P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit ... |
| Features |
Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A RoHS Compliant
November 2007
tm
General Description
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
Applications
Inverter Power Supplies
S D D
Pin 1
D D
SuperSOTTM -6
G
D1 D2 G3
6D 5D 4S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS ID
PD TJ, TSTG
Parameter Drain to Source Voltage Gate to ... |
| Document |
 FDC365P Data Sheet
PDF 234.97KB |
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